Conference Presentation (Invited)

FZJ-2024-03301

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Oxygen-Vacancies-Driven Resistive Switching in Epitaxial Fe3O4 Thin Films

Xu, Y. ; Bednarski-Meinke, C.FZJ* ; Tober, S.FZJ* ; Qdemat, A.FZJ* ; Gunkel, F.FZJ* ; Dittmann, R.FZJ* ; Petracic, O.FZJ* ; Hussein, M.FZJ*

2024

Abstract: Resistive switching implies that the device can be switched between aHigh ResistanceState (HRS) and Low Resistance State (LRS) upon application of an electricfield. Fe3O4 emerges as a candidate for resistive switching due to the sensitivityof its magnetic and electronic properties on the presence of oxygen vacancies.Here we present the preparation and characterization of epitaxial Fe3O4 thinfilms grown on TiO2 - terminated Nb:SrTiO3 via pulsed laser deposition (PLD).We observe resistive switching using I-V measurements and magnetometry. Wepropose a mechanism in which redox reactions and the presence of oxygen vacanciesare responsible for the resistive switching.This effect shows potential fornext-generation magnetoionic device applications.

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Contributing Institute(s):

1. Streumethoden (JCNS-2)
2. Streumethoden (PGI-4)
3. JARA-FIT (JARA-FIT)
4. Elektronische Materialien (PGI-7)

Research Program(s):

1. 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632)
2. 6G4 - Jülich Centre for Neutron Research (JCNS) (FZJ) (POF4-6G4) (POF4-6G4)

Appears in the scientific report 2024

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