TY  - JOUR
AU  - Peronaci, Francesco
AU  - Ameli Kalkhouran, Sara
AU  - Takayoshi, Shintaro
AU  - Landsman, Alexandra
AU  - Oka, Takashi
TI  - Mott memristors based on field-induced carrier avalanche multiplication
JO  - Physical review / B
VL  - 107
IS  - 7
SN  - 2469-9950
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2024-04729
SP  - 075154
PY  - 2023
AB  - We present a theory of Mott memristors whose working principle is the nonlinear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separated by a negative-differential-resistance region, leading to hysteretic behavior. Under oscillating voltage, the response of a voltage-controlled, nonpolar memristive system is obtained, with retarded current and pinched hysteresis loop. As a first step towards neuromorphic applications, we demonstrate self-sustained spiking oscillations in a circuit with a parallel capacitor. Being based on electronic excitations only, this memristor is up to several orders of magnitude faster than previous proposals relying on Joule heating or ionic drift.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000944157700007
DO  - DOI:10.1103/PhysRevB.107.075154
UR  - https://juser.fz-juelich.de/record/1028662
ER  -