Journal Article

FZJ-2024-04729

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Mott memristors based on field-induced carrier avalanche multiplication

Peronaci, F. ; Ameli Kalkhouran, S.FZJ* ; Takayoshi, S. ; Landsman, A. ; Oka, T.

2023
Inst. Woodbury, NY

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Please use a persistent id in citations: doi:10.1103/PhysRevB.107.075154  doi:10.34734/FZJ-2024-04729

Abstract: We present a theory of Mott memristors whose working principle is the nonlinear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separated by a negative-differential-resistance region, leading to hysteretic behavior. Under oscillating voltage, the response of a voltage-controlled, nonpolar memristive system is obtained, with retarded current and pinched hysteresis loop. As a first step towards neuromorphic applications, we demonstrate self-sustained spiking oscillations in a circuit with a parallel capacitor. Being based on electronic excitations only, this memristor is up to several orders of magnitude faster than previous proposals relying on Joule heating or ionic drift.

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Contributing Institute(s):

1. Neuromorphic Compute Nodes (PGI-14)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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