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@ARTICLE{Peronaci:1028662,
author = {Peronaci, Francesco and Ameli Kalkhouran, Sara and
Takayoshi, Shintaro and Landsman, Alexandra and Oka,
Takashi},
title = {{M}ott memristors based on field-induced carrier avalanche
multiplication},
journal = {Physical review / B},
volume = {107},
number = {7},
issn = {2469-9950},
address = {Woodbury, NY},
publisher = {Inst.},
reportid = {FZJ-2024-04729},
pages = {075154},
year = {2023},
abstract = {We present a theory of Mott memristors whose working
principle is the nonlinear carrier avalanche multiplication
in Mott insulators subject to strong electric fields. The
internal state of the memristor, which determines its
resistance, is encoded in the density of doublon and hole
excitations in the Mott insulator. In the current-voltage
characteristic, insulating and conducting states are
separated by a negative-differential-resistance region,
leading to hysteretic behavior. Under oscillating voltage,
the response of a voltage-controlled, nonpolar memristive
system is obtained, with retarded current and pinched
hysteresis loop. As a first step towards neuromorphic
applications, we demonstrate self-sustained spiking
oscillations in a circuit with a parallel capacitor. Being
based on electronic excitations only, this memristor is up
to several orders of magnitude faster than previous
proposals relying on Joule heating or ionic drift.},
cin = {PGI-14},
ddc = {530},
cid = {I:(DE-Juel1)PGI-14-20210412},
pnm = {5234 - Emerging NC Architectures (POF4-523)},
pid = {G:(DE-HGF)POF4-5234},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000944157700007},
doi = {10.1103/PhysRevB.107.075154},
url = {https://juser.fz-juelich.de/record/1028662},
}