Journal Article

PreJuSER-10293

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Formation of pits during growth of Si/Ge nanostructures

Brona, J. ; Cherepanov, V.FZJ* ; Romanyuk, K.FZJ* ; Voigtländer, B.FZJ*

2010
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/j.susc.2009.12.006

Abstract: Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed. (C) 2009 Elsevier BY. All rights reserved.

Keyword(s): J ; Nanostructures (auto) ; Self-assembly (auto) ; Silicon (auto) ; Germanium (auto) ; Scanning tunneling microscopy (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Grenz- und Oberflächen (IBN-3)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Kondensierte Materie (P54)

Appears in the scientific report 2010

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