TY  - JOUR
AU  - Brona, J.
AU  - Cherepanov, V.
AU  - Romanyuk, K.
AU  - Voigtländer, B.
TI  - Formation of pits during growth of Si/Ge nanostructures
JO  - Surface science
VL  - 604
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-10293
SP  - 424-427
PY  - 2010
N1  - Record converted from VDB: 12.11.2012
AB  - Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed. (C) 2009 Elsevier BY. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000274979000028
DO  - DOI:10.1016/j.susc.2009.12.006
UR  - https://juser.fz-juelich.de/record/10293
ER  -