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@ARTICLE{Brona:10293,
author = {Brona, J. and Cherepanov, V. and Romanyuk, K. and
Voigtländer, B.},
title = {{F}ormation of pits during growth of {S}i/{G}e
nanostructures},
journal = {Surface science},
volume = {604},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {PreJuSER-10293},
pages = {424-427},
year = {2010},
note = {Record converted from VDB: 12.11.2012},
abstract = {Alternating deposition of Ge and Si in the step-flow growth
regime using Bi acting as a surfactant can lead to a
spontaneous formation of one atomic layer deep pits in the
area of surface covered by Ge. During Si growth Ge atoms of
the epitaxial 2D Ge layer move to Si step edges where
stronger bonds with Si atoms are formed. Appropriate growth
conditions can suppress or enhance the pit formation effect
and consequently a new type of self-organized nanostructures
can be formed. (C) 2009 Elsevier BY. All rights reserved.},
keywords = {J (WoSType)},
cin = {IBN-3 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)VDB801 / $I:(DE-82)080009_20140620$},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK414},
shelfmark = {Chemistry, Physical / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000274979000028},
doi = {10.1016/j.susc.2009.12.006},
url = {https://juser.fz-juelich.de/record/10293},
}