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| Hauptseite > Publikationsdatenbank > Formation of pits during growth of Si/Ge nanostructures > print |
| Hauptseite > Publikationsdatenbank > Formation of pits during growth of Si/Ge nanostructures > print |
| 001 | 10293 | ||
| 005 | 20180208215740.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.susc.2009.12.006 |
| 024 | 7 | _ | |2 WOS |a WOS:000274979000028 |
| 037 | _ | _ | |a PreJuSER-10293 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Chemistry, Physical |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Brona, J. |b 0 |
| 245 | _ | _ | |a Formation of pits during growth of Si/Ge nanostructures |
| 260 | _ | _ | |a Amsterdam |b Elsevier |c 2010 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 440 | _ | 0 | |0 5673 |a Surface Science |v 604 |x 0039-6028 |y 3 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed. (C) 2009 Elsevier BY. All rights reserved. |
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| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a Nanostructures |
| 653 | 2 | 0 | |2 Author |a Self-assembly |
| 653 | 2 | 0 | |2 Author |a Silicon |
| 653 | 2 | 0 | |2 Author |a Germanium |
| 653 | 2 | 0 | |2 Author |a Scanning tunneling microscopy |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB10516 |a Cherepanov, V. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB71268 |a Romanyuk, K. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB5601 |a Voigtländer, B. |b 3 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)1479030-0 |a 10.1016/j.susc.2009.12.006 |g Vol. 604 |p 424-427 |q 604 |t Surface science |v 604 |x 0039-6028 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.susc.2009.12.006 |
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| 914 | 1 | _ | |y 2010 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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| 980 | _ | _ | |a UNRESTRICTED |
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