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@ARTICLE{Finazzi:1029585,
author = {Finazzi, Lorenzo and Giani, Raffaele and Concepción, Omar
and Buca, Dan and Reboud, Vincent and Isella, Giovanni and
Tosi, Alberto},
title = {{M}odeling and design of {G}e{S}n avalanche photodiodes
with high tin content for applications at 3.3 μm},
journal = {IEEE journal of selected topics in quantum electronics},
volume = {31},
number = {1},
issn = {1077-260X},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2024-05185},
pages = {3800309},
year = {2024},
abstract = {We propose and compare two back-side illuminated GeSn
avalanche photodiode (APD) mesa structures with $15\%$ tin
content operating at photon wavelengths up to 3.3 μm,
suitable for applications like methane gas sensing and
analysis of tampered olive oil. The two structures have
different multiplication materials: a) silicon, which
requires an additional Ge Strain-Relaxed Buffer (SRB) layer
for high-quality GeSn growth; b) germanium, which is acting
also as SRB layer. The latter design is innovative compared
to the state-of-the-art and it proposed to: i) reduce the
space charge region (SCR) width by avoiding a too thick Ge
SRB, which is required for growing high-tin-content GeSn;
ii) avoid one supplementary non-lattice matched
heterojunction in the SCR.},
cin = {PGI-9},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {5234 - Emerging NC Architectures (POF4-523)},
pid = {G:(DE-HGF)POF4-5234},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001309249800006},
doi = {10.1109/JSTQE.2024.3439495},
url = {https://juser.fz-juelich.de/record/1029585},
}