%0 Journal Article
%A Smart, Thomas
%A Kim, Dong Yeong
%A Braun, Wolfgang
%T Twin-free thermal laser epitaxy of Si on sapphire
%J Journal of vacuum science & technology / B
%V 42
%N 6
%@ 2166-2746
%C New York, NY
%I AIP Publishing
%M FZJ-2024-06129
%P 062204
%D 2024
%X The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with 0.3% stability over time. We also demonstrate heteroepitaxy of Si on -plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000  C produced high-quality epitaxial Si (111) films without twin domains.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001341143700001
%R 10.1116/6.0003945
%U https://juser.fz-juelich.de/record/1032290