Journal Article

FZJ-2024-06129

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Twin-free thermal laser epitaxy of Si on sapphire

Smart, T.FZJ* ; Kim, D. Y. (Corresponding author) ; Braun, W.

2024
AIP Publishing New York, NY

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Please use a persistent id in citations: doi:10.1116/6.0003945  doi:10.34734/FZJ-2024-06129

Abstract: The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with 0.3% stability over time. We also demonstrate heteroepitaxy of Si on -plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000  C produced high-quality epitaxial Si (111) films without twin domains.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) (POF4-522)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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