TY  - JOUR
AU  - Smart, Thomas
AU  - Kim, Dong Yeong
AU  - Braun, Wolfgang
TI  - Twin-free thermal laser epitaxy of Si on sapphire
JO  - Journal of vacuum science & technology / B
VL  - 42
IS  - 6
SN  - 2166-2746
CY  - New York, NY
PB  - AIP Publishing
M1  - FZJ-2024-06129
SP  - 062204
PY  - 2024
AB  - The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with 0.3% stability over time. We also demonstrate heteroepitaxy of Si on -plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000  C produced high-quality epitaxial Si (111) films without twin domains.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001341143700001
DO  - DOI:10.1116/6.0003945
UR  - https://juser.fz-juelich.de/record/1032290
ER  -