% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Smart:1032290, author = {Smart, Thomas and Kim, Dong Yeong and Braun, Wolfgang}, title = {{T}win-free thermal laser epitaxy of {S}i on sapphire}, journal = {Journal of vacuum science $\&$ technology / B}, volume = {42}, number = {6}, issn = {2166-2746}, address = {New York, NY}, publisher = {AIP Publishing}, reportid = {FZJ-2024-06129}, pages = {062204}, year = {2024}, abstract = {The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with $0.3\%$ stability over time. We also demonstrate heteroepitaxy of Si on -plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000 C produced high-quality epitaxial Si (111) films without twin domains.}, cin = {PGI-9}, ddc = {530}, cid = {I:(DE-Juel1)PGI-9-20110106}, pnm = {5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522)}, pid = {G:(DE-HGF)POF4-5221}, typ = {PUB:(DE-HGF)16}, UT = {WOS:001341143700001}, doi = {10.1116/6.0003945}, url = {https://juser.fz-juelich.de/record/1032290}, }