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| Hauptseite > Publikationsdatenbank > Twin-free thermal laser epitaxy of Si on sapphire > print |
| 001 | 1032290 | ||
| 005 | 20250203133217.0 | ||
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| 037 | _ | _ | |a FZJ-2024-06129 |
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| 100 | 1 | _ | |a Smart, Thomas |0 P:(DE-Juel1)196794 |b 0 |u fzj |
| 245 | _ | _ | |a Twin-free thermal laser epitaxy of Si on sapphire |
| 260 | _ | _ | |a New York, NY |c 2024 |b AIP Publishing |
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| 520 | _ | _ | |a The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with 0.3% stability over time. We also demonstrate heteroepitaxy of Si on -plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000 C produced high-quality epitaxial Si (111) films without twin domains. |
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| 588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
| 700 | 1 | _ | |a Kim, Dong Yeong |0 P:(DE-HGF)0 |b 1 |e Corresponding author |
| 700 | 1 | _ | |a Braun, Wolfgang |0 P:(DE-HGF)0 |b 2 |
| 773 | _ | _ | |a 10.1116/6.0003945 |g Vol. 42, no. 6, p. 062204 |0 PERI:(DE-600)3117331-7 |n 6 |p 062204 |t Journal of vacuum science & technology / B |v 42 |y 2024 |x 2166-2746 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1032290/files/062204_1_6.0003945.pdf |y OpenAccess |
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