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001033644 1001_ $$0P:(DE-Juel1)186980$$aLiu, Teren$$b0
001033644 245__ $$aElectrically Pumped GeSn Micro-Ring Lasers
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001033644 520__ $$aRecent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.
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001033644 7001_ $$0P:(DE-HGF)0$$aSeidel, Lukas$$b1
001033644 7001_ $$0P:(DE-Juel1)188576$$aConcepción, Omar$$b2
001033644 7001_ $$0P:(DE-HGF)0$$aReboud, Vincent$$b3
001033644 7001_ $$0P:(DE-HGF)0$$aChelnokov, Alexei$$b4
001033644 7001_ $$0P:(DE-HGF)0$$aCapellini, Giovanni$$b5
001033644 7001_ $$0P:(DE-HGF)0$$aOehme, Michael$$b6
001033644 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b7
001033644 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b8
001033644 773__ $$0PERI:(DE-600)2025385-0$$a10.1109/JSTQE.2024.3489712$$gVol. 31, no. 1: SiGeSn Infrared Photon., p. 1 - 7$$n1: SiGeSn Infrared Photon.$$p1 - 7$$tIEEE journal of selected topics in quantum electronics$$v31$$x1077-260X$$y2025
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