Journal Article

FZJ-2024-06516

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrically Pumped GeSn Micro-Ring Lasers

Liu, T.FZJ* ; Seidel, L. ; Concepción, O.FZJ* ; Reboud, V. ; Chelnokov, A. ; Capellini, G. ; Oehme, M. ; Grützmacher, D.FZJ* ; Buca, D.FZJ*

2025
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/JSTQE.2024.3489712  doi:10.34734/FZJ-2024-06516

Abstract: Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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