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| Hauptseite > Publikationsdatenbank > Electrically Pumped GeSn Micro-Ring Lasers > print |
| 001 | 1033644 | ||
| 005 | 20250203133241.0 | ||
| 024 | 7 | _ | |a 10.1109/JSTQE.2024.3489712 |2 doi |
| 024 | 7 | _ | |a 1077-260X |2 ISSN |
| 024 | 7 | _ | |a 1558-4542 |2 ISSN |
| 024 | 7 | _ | |a 10.34734/FZJ-2024-06516 |2 datacite_doi |
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| 037 | _ | _ | |a FZJ-2024-06516 |
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| 100 | 1 | _ | |a Liu, Teren |0 P:(DE-Juel1)186980 |b 0 |
| 245 | _ | _ | |a Electrically Pumped GeSn Micro-Ring Lasers |
| 260 | _ | _ | |a New York, NY |c 2025 |b IEEE |
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| 520 | _ | _ | |a Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density. |
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| 700 | 1 | _ | |a Seidel, Lukas |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Concepción, Omar |0 P:(DE-Juel1)188576 |b 2 |
| 700 | 1 | _ | |a Reboud, Vincent |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Chelnokov, Alexei |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Capellini, Giovanni |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Oehme, Michael |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 7 |
| 700 | 1 | _ | |a Buca, Dan |0 P:(DE-Juel1)125569 |b 8 |
| 773 | _ | _ | |a 10.1109/JSTQE.2024.3489712 |g Vol. 31, no. 1: SiGeSn Infrared Photon., p. 1 - 7 |0 PERI:(DE-600)2025385-0 |n 1: SiGeSn Infrared Photon. |p 1 - 7 |t IEEE journal of selected topics in quantum electronics |v 31 |y 2025 |x 1077-260X |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/1033644/files/APC600602492.pdf |
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