%0 Journal Article
%A van Efferen, Camiel
%A Hall, Joshua
%A Atodiresei, Nicolae
%A Boix, Virginia
%A Safeer, Affan
%A Wekking, Tobias
%A Vinogradov, Nikolay A.
%A Preobrajenski, Alexei B.
%A Knudsen, Jan
%A Fischer, Jeison
%A Jolie, Wouter
%A Michely, Thomas
%T 2D Vanadium Sulfides: Synthesis, Atomic Structure Engineering, and Charge Density Waves
%J ACS nano
%V 18
%N 22
%@ 1936-0851
%C Washington, DC
%I Soc.
%M FZJ-2024-06995
%P 14161 - 14175
%D 2024
%X Two ultimately thin vanadium-rich 2D materials based on VS2 are created via molecular beam epitaxyand investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy, and density functionaltheory (DFT) calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the twovanadium-rich materials is achieved by varying the sample coverage and sulfur pressure during annealing. Throughannealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1Darrays, giving rise to patterned adsorption. Via the comparison of DFT calculations with scanning tunnelingmicroscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. Bydepositing larger amounts of vanadium and sulfur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2 × 2 V-layers between sheets of VS2. Weprovide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy toinvestigate the charge density wave observed in the 2D V5S8-derived islands.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ 38771774
%U <Go to ISI:>//WOS:001228945400001
%R 10.1021/acsnano.3c05907
%U https://juser.fz-juelich.de/record/1034184