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Journal Article | FZJ-2024-06995 |
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2024
Soc.
Washington, DC
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Please use a persistent id in citations: doi:10.1021/acsnano.3c05907 doi:10.34734/FZJ-2024-06995
Abstract: Two ultimately thin vanadium-rich 2D materials based on VS2 are created via molecular beam epitaxyand investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy, and density functionaltheory (DFT) calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the twovanadium-rich materials is achieved by varying the sample coverage and sulfur pressure during annealing. Throughannealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1Darrays, giving rise to patterned adsorption. Via the comparison of DFT calculations with scanning tunnelingmicroscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. Bydepositing larger amounts of vanadium and sulfur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2 × 2 V-layers between sheets of VS2. Weprovide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy toinvestigate the charge density wave observed in the 2D V5S8-derived islands.
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