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@ARTICLE{vanEfferen:1034184,
      author       = {van Efferen, Camiel and Hall, Joshua and Atodiresei,
                      Nicolae and Boix, Virginia and Safeer, Affan and Wekking,
                      Tobias and Vinogradov, Nikolay A. and Preobrajenski, Alexei
                      B. and Knudsen, Jan and Fischer, Jeison and Jolie, Wouter
                      and Michely, Thomas},
      title        = {2{D} {V}anadium {S}ulfides: {S}ynthesis, {A}tomic
                      {S}tructure {E}ngineering, and {C}harge {D}ensity {W}aves},
      journal      = {ACS nano},
      volume       = {18},
      number       = {22},
      issn         = {1936-0851},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2024-06995},
      pages        = {14161 - 14175},
      year         = {2024},
      abstract     = {Two ultimately thin vanadium-rich 2D materials based on VS2
                      are created via molecular beam epitaxyand investigated using
                      scanning tunneling microscopy, X-ray photoemission
                      spectroscopy, and density functionaltheory (DFT)
                      calculations. The controlled synthesis of stoichiometric
                      single-layer VS2 or either of the twovanadium-rich materials
                      is achieved by varying the sample coverage and sulfur
                      pressure during annealing. Throughannealing of small
                      stoichiometric single-layer VS2 islands without S pressure,
                      S-vacancies spontaneously order in 1Darrays, giving rise to
                      patterned adsorption. Via the comparison of DFT calculations
                      with scanning tunnelingmicroscopy data, the atomic structure
                      of the S-depleted phase, with a stoichiometry of V4S7, is
                      determined. Bydepositing larger amounts of vanadium and
                      sulfur, which are subsequently annealed in a S-rich
                      atmosphere, self-intercalated ultimately thin V5S8-derived
                      layers are obtained, which host 2 × 2 V-layers between
                      sheets of VS2. Weprovide atomic models for the thinnest
                      V5S8-derived structures. Finally, we use scanning tunneling
                      spectroscopy toinvestigate the charge density wave observed
                      in the 2D V5S8-derived islands.},
      cin          = {PGI-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-1-20110106},
      pnm          = {5211 - Topological Matter (POF4-521) / SFB 1238 A01 -
                      Konstruktion von 2D-Heterostrukturen für die Kontrolle
                      elektronischer, optischer und magnetischer Eigenschaften
                      (A01) (319464028) / SFB 1238 B06 - Rastertunnelspektroskopie
                      (B06) (319897474) / SFB 1238 C01 -
                      Strukturinversionsasymmetrische Materie und
                      Spin-Orbit-Phänomene mittels ab initio (C01) (319898210)},
      pid          = {G:(DE-HGF)POF4-5211 / G:(GEPRIS)319464028 /
                      G:(GEPRIS)319897474 / G:(GEPRIS)319898210},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {38771774},
      UT           = {WOS:001228945400001},
      doi          = {10.1021/acsnano.3c05907},
      url          = {https://juser.fz-juelich.de/record/1034184},
}