%0 Journal Article
%A Dehury, Taranga
%A Kumar, Sandeep
%A Pütter, Sabine
%A Roy, Suman
%A Sahoo, Satyaprakash
%A Rath, Chandana
%T Volatile resistive switching characteristics of molecular beam epitaxy grown HfO2 thin films
%J Applied surface science
%V 685
%@ 0169-4332
%C Amsterdam
%I Elsevier
%M FZJ-2025-00371
%P 162060 -
%D 2025
%X In this work, we have explored the structure, morphology and resistive switching aspects of molecular beamepitaxy grown HfO2 thin films fabricated on highly doped p-type Si substrate at substrate temperatures of 300and 500 ◦C. Both films correspond to the monoclinic phase (P21/c) of HfO2 and exhibit single crystallinestructure with a preferred orientation along (111). The density of the HfO2 layer is found to be 9.1 and 9.2 g/cm3,whereas the root mean square roughness is 1.3 and 2.4 nm in the films grown at 300 and 500 ◦C, respectively.Both films have an average grain size of ~ 140 nm. These HfO2 films demonstrate forming free volatile resistiveswitching behavior with SET voltage of − 3.1 and − 3.6 V, along with the ON/OFF ratio of ~ 2 and ~ 4 for thefilms deposited at substrate temperatures of 300 and 500 ◦C, respectively. For the films grown at 300 ◦C and500 ◦C, the retention time is found to be 20 and 30 s, respectively. Memory device based on HfO2 film withhigher substrate temperature exhibits a better ON/OFF ratio due to higher crystallinity and the availability ofmore oxygen vacancies. A comprehensive mechanism of resistive switching is also discussed in this article,considering the transport of oxygen vacancies and the electromigration of Ag ions.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001389098600001
%R 10.1016/j.apsusc.2024.162060
%U https://juser.fz-juelich.de/record/1035313