Journal Article

FZJ-2025-00371

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Volatile resistive switching characteristics of molecular beam epitaxy grown HfO2 thin films

Dehury, T. ; Kumar, S. ; Pütter, S.FZJ* ; Roy, S. ; Sahoo, S. ; Rath, C. (Corresponding author)

2025
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/j.apsusc.2024.162060  doi:10.34734/FZJ-2025-00371

Abstract: In this work, we have explored the structure, morphology and resistive switching aspects of molecular beamepitaxy grown HfO2 thin films fabricated on highly doped p-type Si substrate at substrate temperatures of 300and 500 ◦C. Both films correspond to the monoclinic phase (P21/c) of HfO2 and exhibit single crystallinestructure with a preferred orientation along (111). The density of the HfO2 layer is found to be 9.1 and 9.2 g/cm3,whereas the root mean square roughness is 1.3 and 2.4 nm in the films grown at 300 and 500 ◦C, respectively.Both films have an average grain size of ~ 140 nm. These HfO2 films demonstrate forming free volatile resistiveswitching behavior with SET voltage of − 3.1 and − 3.6 V, along with the ON/OFF ratio of ~ 2 and ~ 4 for thefilms deposited at substrate temperatures of 300 and 500 ◦C, respectively. For the films grown at 300 ◦C and500 ◦C, the retention time is found to be 20 and 30 s, respectively. Memory device based on HfO2 film withhigher substrate temperature exhibits a better ON/OFF ratio due to higher crystallinity and the availability ofmore oxygen vacancies. A comprehensive mechanism of resistive switching is also discussed in this article,considering the transport of oxygen vacancies and the electromigration of Ag ions.

Keyword(s): Information and Communication (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):

1. JCNS-4 (JCNS-4)
2. JCNS-FRM-II (JCNS-FRM-II)
3. Heinz Maier-Leibnitz Zentrum (MLZ)

Research Program(s):

1. 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632)
2. 6G4 - Jülich Centre for Neutron Research (JCNS) (FZJ) (POF4-6G4) (POF4-6G4)

Experiment(s):

1. MBE-MLZ: Molecular Beam Epitaxy at MLZ

Appears in the scientific report 2025

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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