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001035313 041__ $$aEnglish
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001035313 1001_ $$0P:(DE-HGF)0$$aDehury, Taranga$$b0
001035313 245__ $$aVolatile resistive switching characteristics of molecular beam epitaxy grown HfO2 thin films
001035313 260__ $$aAmsterdam$$bElsevier$$c2025
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001035313 520__ $$aIn this work, we have explored the structure, morphology and resistive switching aspects of molecular beamepitaxy grown HfO2 thin films fabricated on highly doped p-type Si substrate at substrate temperatures of 300and 500 ◦C. Both films correspond to the monoclinic phase (P21/c) of HfO2 and exhibit single crystallinestructure with a preferred orientation along (111). The density of the HfO2 layer is found to be 9.1 and 9.2 g/cm3,whereas the root mean square roughness is 1.3 and 2.4 nm in the films grown at 300 and 500 ◦C, respectively.Both films have an average grain size of ~ 140 nm. These HfO2 films demonstrate forming free volatile resistiveswitching behavior with SET voltage of − 3.1 and − 3.6 V, along with the ON/OFF ratio of ~ 2 and ~ 4 for thefilms deposited at substrate temperatures of 300 and 500 ◦C, respectively. For the films grown at 300 ◦C and500 ◦C, the retention time is found to be 20 and 30 s, respectively. Memory device based on HfO2 film withhigher substrate temperature exhibits a better ON/OFF ratio due to higher crystallinity and the availability ofmore oxygen vacancies. A comprehensive mechanism of resistive switching is also discussed in this article,considering the transport of oxygen vacancies and the electromigration of Ag ions.
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001035313 693__ $$0EXP:(DE-MLZ)MBE-MLZ-20151210$$5EXP:(DE-MLZ)MBE-MLZ-20151210$$eMBE-MLZ: Molecular Beam Epitaxy at MLZ$$x0
001035313 7001_ $$0P:(DE-HGF)0$$aKumar, Sandeep$$b1
001035313 7001_ $$0P:(DE-Juel1)142052$$aPütter, Sabine$$b2$$ufzj
001035313 7001_ $$0P:(DE-HGF)0$$aRoy, Suman$$b3
001035313 7001_ $$0P:(DE-HGF)0$$aSahoo, Satyaprakash$$b4
001035313 7001_ $$0P:(DE-HGF)0$$aRath, Chandana$$b5$$eCorresponding author
001035313 773__ $$0PERI:(DE-600)2002520-8$$a10.1016/j.apsusc.2024.162060$$gVol. 685, p. 162060 -$$p162060 -$$tApplied surface science$$v685$$x0169-4332$$y2025
001035313 8564_ $$uhttps://juser.fz-juelich.de/record/1035313/files/Dehury.pdf$$yPublished on 2024-12-09. Available in OpenAccess from 2026-12-09.
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