% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Dehury:1035313,
      author       = {Dehury, Taranga and Kumar, Sandeep and Pütter, Sabine and
                      Roy, Suman and Sahoo, Satyaprakash and Rath, Chandana},
      title        = {{V}olatile resistive switching characteristics of molecular
                      beam epitaxy grown {H}f{O}2 thin films},
      journal      = {Applied surface science},
      volume       = {685},
      issn         = {0169-4332},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2025-00371},
      pages        = {162060 -},
      year         = {2025},
      abstract     = {In this work, we have explored the structure, morphology
                      and resistive switching aspects of molecular beamepitaxy
                      grown HfO2 thin films fabricated on highly doped p-type Si
                      substrate at substrate temperatures of 300and 500 ◦C. Both
                      films correspond to the monoclinic phase (P21/c) of HfO2 and
                      exhibit single crystallinestructure with a preferred
                      orientation along (111). The density of the HfO2 layer is
                      found to be 9.1 and 9.2 g/cm3,whereas the root mean square
                      roughness is 1.3 and 2.4 nm in the films grown at 300 and
                      500 ◦C, respectively.Both films have an average grain size
                      of ~ 140 nm. These HfO2 films demonstrate forming free
                      volatile resistiveswitching behavior with SET voltage of −
                      3.1 and − 3.6 V, along with the ON/OFF ratio of ~ 2 and ~
                      4 for thefilms deposited at substrate temperatures of 300
                      and 500 ◦C, respectively. For the films grown at 300 ◦C
                      and500 ◦C, the retention time is found to be 20 and 30 s,
                      respectively. Memory device based on HfO2 film withhigher
                      substrate temperature exhibits a better ON/OFF ratio due to
                      higher crystallinity and the availability ofmore oxygen
                      vacancies. A comprehensive mechanism of resistive switching
                      is also discussed in this article,considering the transport
                      of oxygen vacancies and the electromigration of Ag ions.},
      cin          = {JCNS-4 / JCNS-FRM-II / MLZ},
      ddc          = {660},
      cid          = {I:(DE-Juel1)JCNS-4-20201012 /
                      I:(DE-Juel1)JCNS-FRM-II-20110218 / I:(DE-588b)4597118-3},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G4 - Jülich Centre for Neutron
                      Research (JCNS) (FZJ) (POF4-6G4)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G4},
      experiment   = {EXP:(DE-MLZ)MBE-MLZ-20151210},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001389098600001},
      doi          = {10.1016/j.apsusc.2024.162060},
      url          = {https://juser.fz-juelich.de/record/1035313},
}