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001     1035313
005     20250203133244.0
024 7 _ |a 10.1016/j.apsusc.2024.162060
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024 7 _ |a 1873-5584
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024 7 _ |a 10.34734/FZJ-2025-00371
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082 _ _ |a 660
100 1 _ |a Dehury, Taranga
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245 _ _ |a Volatile resistive switching characteristics of molecular beam epitaxy grown HfO2 thin films
260 _ _ |a Amsterdam
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520 _ _ |a In this work, we have explored the structure, morphology and resistive switching aspects of molecular beamepitaxy grown HfO2 thin films fabricated on highly doped p-type Si substrate at substrate temperatures of 300and 500 ◦C. Both films correspond to the monoclinic phase (P21/c) of HfO2 and exhibit single crystallinestructure with a preferred orientation along (111). The density of the HfO2 layer is found to be 9.1 and 9.2 g/cm3,whereas the root mean square roughness is 1.3 and 2.4 nm in the films grown at 300 and 500 ◦C, respectively.Both films have an average grain size of ~ 140 nm. These HfO2 films demonstrate forming free volatile resistiveswitching behavior with SET voltage of − 3.1 and − 3.6 V, along with the ON/OFF ratio of ~ 2 and ~ 4 for thefilms deposited at substrate temperatures of 300 and 500 ◦C, respectively. For the films grown at 300 ◦C and500 ◦C, the retention time is found to be 20 and 30 s, respectively. Memory device based on HfO2 film withhigher substrate temperature exhibits a better ON/OFF ratio due to higher crystallinity and the availability ofmore oxygen vacancies. A comprehensive mechanism of resistive switching is also discussed in this article,considering the transport of oxygen vacancies and the electromigration of Ag ions.
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|e MBE-MLZ: Molecular Beam Epitaxy at MLZ
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700 1 _ |a Kumar, Sandeep
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700 1 _ |a Pütter, Sabine
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700 1 _ |a Roy, Suman
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700 1 _ |a Sahoo, Satyaprakash
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700 1 _ |a Rath, Chandana
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773 _ _ |a 10.1016/j.apsusc.2024.162060
|g Vol. 685, p. 162060 -
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|t Applied surface science
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856 4 _ |u https://juser.fz-juelich.de/record/1035313/files/Dehury.pdf
|y Published on 2024-12-09. Available in OpenAccess from 2026-12-09.
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