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@ARTICLE{Tilgner:1039742,
      author       = {Tilgner, Niclas and Wolff, Susanne and Soubatch, Serguei
                      and Lee, Tien-Lin and Unigarro, Andres David Peña and
                      Gemming, Sibylle and Tautz, F. Stefan and Kumpf, Christian
                      and Seyller, Thomas and Göhler, Fabian and Schädlich,
                      Philip},
      title        = {{R}eversible {S}witching of the {E}nvironment-{P}rotected
                      {Q}uantum {S}pin {H}all {I}nsulator {B}ismuthene at the
                      {G}raphene/{S}i{C} {I}nterface},
      reportid     = {FZJ-2025-01781, arXiv:2502.03314},
      year         = {2025},
      note         = {12 pages, 3 figures, supplementary information},
      abstract     = {Quantum Spin Hall Insulators (QSHI) have been extensively
                      studied both theoretically and experimentally because they
                      exhibit robust helical edge states driven by spin-orbit
                      coupling and offer the potential for applications in
                      spintronics through dissipationless spin transport. However,
                      to realize devices, it is indispensable to gain control over
                      the interaction of the active layer with the substrate, and
                      to protect it from environmental influences. Here we show
                      that a single layer of elemental Bi, formed by intercalation
                      of an epitaxial graphene buffer layer on SiC(0001), is a
                      promising candidate for a QSHI. This layer can be reversibly
                      switched between an electronically inactive precursor state
                      and a ``bismuthene state'', the latter exhibiting the
                      predicted band structure of a true two-dimensional
                      bismuthene layer. Switching is accomplished by hydrogenation
                      (dehydrogenation) of the sample, i.e., a partial passivation
                      (activation) of dangling bonds of the SiC substrate, causing
                      a lateral shift of Bi atoms involving a change of the
                      adsorption site. In the bismuthene state, the Bi honeycomb
                      layer is a prospective QSHI, inherently protected by the
                      graphene sheet above and the H-passivated substrate below.
                      Thus, our results represent an important step towards
                      protected QSHI systems beyond graphene.},
      cin          = {PGI-3},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521) / SFB 1083 A12 -
                      Struktur und Anregungen von hetero-epitaktischen
                      Schichtsystemen aus schwach wechselwirkenden 2D-Materialien
                      und molekularen Schichten (A12) (385975694)},
      pid          = {G:(DE-HGF)POF4-5213 / G:(GEPRIS)385975694},
      typ          = {PUB:(DE-HGF)25},
      eprint       = {2502.03314},
      howpublished = {arXiv:2502.03314},
      archivePrefix = {arXiv},
      SLACcitation = {$\%\%CITATION$ = $arXiv:2502.03314;\%\%$},
      doi          = {10.48550/arXiv.2502.03314},
      url          = {https://juser.fz-juelich.de/record/1039742},
}