%0 Electronic Article
%A Bocquet, F. C.
%A Lin, Y. -R.
%A Franke, M.
%A Samiseresht, N.
%A Parhizkar, S.
%A Soubatch, S.
%A Lee, T. -L.
%A Kumpf, C.
%A Tautz, F. S.
%T Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
%I arXiv
%M FZJ-2025-02346
%D 2018
%Z PoF III period
%X We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
%K Materials Science (cond-mat.mtrl-sci) (Other)
%K FOS: Physical sciences (Other)
%F PUB:(DE-HGF)25
%9 Preprint
%R 10.48550/ARXIV.1809.07958
%U https://juser.fz-juelich.de/record/1041612