Preprint

FZJ-2025-02346

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

Bocquet, F. C. (Corresponding author)FZJ* ; Lin, Y. -. ; Franke, M.FZJ* ; Samiseresht, N. ; Parhizkar, S.FZJ* ; Soubatch, S.FZJ* ; Lee, T. -.Extern* ; Kumpf, C.FZJ* ; Tautz, F. S.FZJ*

2018
arXiv

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Please use a persistent id in citations: doi:10.48550/ARXIV.1809.07958

Abstract: We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.

Keyword(s): Materials Science (cond-mat.mtrl-sci) ; FOS: Physical sciences

Note: PoF III period

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Contributing Institute(s):

1. Quantum Nanoscience (PGI-3)

Research Program(s):

1. 5213 - Quantum Nanoscience (POF4-521) (POF4-521)

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