TY  - EJOUR
AU  - Bocquet, F. C.
AU  - Lin, Y. -R.
AU  - Franke, M.
AU  - Samiseresht, N.
AU  - Parhizkar, S.
AU  - Soubatch, S.
AU  - Lee, T. -L.
AU  - Kumpf, C.
AU  - Tautz, F. S.
TI  - Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
PB  - arXiv
M1  - FZJ-2025-02346
PY  - 2018
N1  - PoF III period
AB  - We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
KW  - Materials Science (cond-mat.mtrl-sci) (Other)
KW  - FOS: Physical sciences (Other)
LB  - PUB:(DE-HGF)25
DO  - DOI:10.48550/ARXIV.1809.07958
UR  - https://juser.fz-juelich.de/record/1041612
ER  -