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@ARTICLE{Bocquet:1041612,
author = {Bocquet, F. C. and Lin, Y. -R. and Franke, M. and
Samiseresht, N. and Parhizkar, S. and Soubatch, S. and Lee,
T. -L. and Kumpf, C. and Tautz, F. S.},
title = {{S}urfactant-{M}ediated {E}pitaxial {G}rowth of
{S}ingle-{L}ayer {G}raphene in an {U}nconventional
{O}rientation on {S}i{C}},
publisher = {arXiv},
reportid = {FZJ-2025-02346},
year = {2018},
note = {PoF III period},
abstract = {We report the use of a surfactant molecule during the
epitaxy of graphene on SiC(0001) that leads to the growth in
an unconventional orientation, namely $R0^\circ$ rotation
with respect to the SiC lattice. It yields a very
high-quality single-layer graphene with a uniform
orientation with respect to the substrate, on the wafer
scale. We find an increased quality and homogeneity compared
to the approach based on the use of a pre-oriented template
to induce the unconventional orientation. Using spot profile
analysis low energy electron diffraction, angle-resolved
photoelectron spectroscopy, and the normal incidence x-ray
standing wave technique, we assess the crystalline quality
and coverage of the graphene layer. Combined with the
presence of a covalently-bound graphene layer in the
conventional orientation underneath, our surfactant-mediated
growth offers an ideal platform to prepare epitaxial twisted
bilayer graphene via intercalation.},
keywords = {Materials Science (cond-mat.mtrl-sci) (Other) / FOS:
Physical sciences (Other)},
cin = {PGI-3},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {5213 - Quantum Nanoscience (POF4-521)},
pid = {G:(DE-HGF)POF4-5213},
typ = {PUB:(DE-HGF)25},
doi = {10.48550/ARXIV.1809.07958},
url = {https://juser.fz-juelich.de/record/1041612},
}