Home > Publications database > Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC > print

001     1041612
005     20250424202216.0
024 7 _ |a 10.48550/ARXIV.1809.07958
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037 _ _ |a FZJ-2025-02346
100 1 _ |a Bocquet, F. C.
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245 _ _ |a Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
260 _ _ |c 2018
|b arXiv
336 7 _ |a Preprint
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336 7 _ |a Electronic Article
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336 7 _ |a ARTICLE
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336 7 _ |a Output Types/Working Paper
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500 _ _ |a PoF III period
520 _ _ |a We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
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650 _ 7 |a Materials Science (cond-mat.mtrl-sci)
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700 1 _ |a Lin, Y. -R.
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700 1 _ |a Franke, M.
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700 1 _ |a Samiseresht, N.
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700 1 _ |a Parhizkar, S.
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700 1 _ |a Soubatch, S.
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700 1 _ |a Lee, T. -L.
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700 1 _ |a Kumpf, C.
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700 1 _ |a Tautz, F. S.
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773 _ _ |a 10.48550/ARXIV.1809.07958
856 4 _ |u https://arxiv.org/abs/1809.07958
909 C O |o oai:juser.fz-juelich.de:1041612
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