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@ARTICLE{Stavarache:1041793,
author = {Stavarache, Ionel and Palade, Catalin and Slav, Adrian and
Dascalescu, Ioana and Lepadatu, Ana-Maria and Matei, Elena
and Besleaga, Cristina and Ciurea, Magdalena Lidia and
Kardynal, Beata E. and Stoica, Toma},
title = {{E}ffect of molecular adsorption on the conductivity of
selectively grown, interconnected 2{D}-{M}o{S} 2 atomically
thin flake structures},
journal = {Nanoscale advances},
volume = {7},
number = {8},
issn = {2516-0230},
address = {Cambridge},
publisher = {Royal Society of Chemistry},
reportid = {FZJ-2025-02430},
pages = {2368 - 2380},
year = {2025},
abstract = {The gas sensitivity of field-effect structures with 2D-MoS2
channels selectively grown between Mo electrodes using the
Mo-CVD method was investigated by measuring the effect of
molecular adsorption from air on the device source-drain
current (Isd). The channels were composed of interconnected
atomically thin MoS2 grains, with their density and average
thickness varied by choosing two different distances (15 and
20 μm) between the Mo contacts. A high response to the
tested stimuli, including molecule adsorption, illumination
and gate voltage changes, was observed. A significant,
persistent photoconduction was induced by positive charge
accumulation on traps, most likely at grain boundaries and
associated defects. Isd increased under high vacuum, both in
the dark and under illumination. The relative dark current
response to the transition from air to high vacuum reached
up to $1000\%$ at the turn-on voltage. When monitored during
the gradual change in air pressure, Isd exhibited a
non-monotonic function, sharply peaking at about 10−2
mbar, suggesting molecular adsorption on different defect
sites and orientations of adsorbed H2O molecules, which were
capable of inducing electron accumulation or depletion.
Despite the screening of disorder by extra electrons, the
#20 μm sample remained more sensitive to air molecules on
its surface. The high vacuum state was also investigated by
annealing devices at temperatures up to 340 K in high
vacuum, followed by measurements down to 100 K. This
revealed thermally stimulated currents and activation
energies of trapping electronic states assigned to sulfur
vacancies (230 meV) and other shallow levels (85–120 meV),
possibly due to natural impurities, grain boundaries or
disorder defects. The results demonstrate the high
sensitivity of these devices to molecular adsorption, making
the technology promising for the easy fabrication of
chemical sensors.},
cin = {PGI-9},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {5224 - Quantum Networking (POF4-522)},
pid = {G:(DE-HGF)POF4-5224},
typ = {PUB:(DE-HGF)16},
pubmed = {40061838},
UT = {WOS:001438665400001},
doi = {10.1039/D5NA00138B},
url = {https://juser.fz-juelich.de/record/1041793},
}