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@ARTICLE{Stavarache:1041793,
      author       = {Stavarache, Ionel and Palade, Catalin and Slav, Adrian and
                      Dascalescu, Ioana and Lepadatu, Ana-Maria and Matei, Elena
                      and Besleaga, Cristina and Ciurea, Magdalena Lidia and
                      Kardynal, Beata E. and Stoica, Toma},
      title        = {{E}ffect of molecular adsorption on the conductivity of
                      selectively grown, interconnected 2{D}-{M}o{S} 2 atomically
                      thin flake structures},
      journal      = {Nanoscale advances},
      volume       = {7},
      number       = {8},
      issn         = {2516-0230},
      address      = {Cambridge},
      publisher    = {Royal Society of Chemistry},
      reportid     = {FZJ-2025-02430},
      pages        = {2368 - 2380},
      year         = {2025},
      abstract     = {The gas sensitivity of field-effect structures with 2D-MoS2
                      channels selectively grown between Mo electrodes using the
                      Mo-CVD method was investigated by measuring the effect of
                      molecular adsorption from air on the device source-drain
                      current (Isd). The channels were composed of interconnected
                      atomically thin MoS2 grains, with their density and average
                      thickness varied by choosing two different distances (15 and
                      20 μm) between the Mo contacts. A high response to the
                      tested stimuli, including molecule adsorption, illumination
                      and gate voltage changes, was observed. A significant,
                      persistent photoconduction was induced by positive charge
                      accumulation on traps, most likely at grain boundaries and
                      associated defects. Isd increased under high vacuum, both in
                      the dark and under illumination. The relative dark current
                      response to the transition from air to high vacuum reached
                      up to $1000\%$ at the turn-on voltage. When monitored during
                      the gradual change in air pressure, Isd exhibited a
                      non-monotonic function, sharply peaking at about 10−2
                      mbar, suggesting molecular adsorption on different defect
                      sites and orientations of adsorbed H2O molecules, which were
                      capable of inducing electron accumulation or depletion.
                      Despite the screening of disorder by extra electrons, the
                      #20 μm sample remained more sensitive to air molecules on
                      its surface. The high vacuum state was also investigated by
                      annealing devices at temperatures up to 340 K in high
                      vacuum, followed by measurements down to 100 K. This
                      revealed thermally stimulated currents and activation
                      energies of trapping electronic states assigned to sulfur
                      vacancies (230 meV) and other shallow levels (85–120 meV),
                      possibly due to natural impurities, grain boundaries or
                      disorder defects. The results demonstrate the high
                      sensitivity of these devices to molecular adsorption, making
                      the technology promising for the easy fabrication of
                      chemical sensors.},
      cin          = {PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5224 - Quantum Networking (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5224},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {40061838},
      UT           = {WOS:001438665400001},
      doi          = {10.1039/D5NA00138B},
      url          = {https://juser.fz-juelich.de/record/1041793},
}