% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Han:1042314,
author = {Han, Yi and Sun, Jingxuan and Richstein, Benjamin and
Grenmyr, Andreas and Bae, Jin-Hee and Allibert, Frederic and
Radu, Ionut and Grützmacher, Detlev and Knoch, Joachim and
Zhao, Qing-Tai},
title = {{A}n {E}nergy {E}fficient {M}emory {C}ell for {Q}uantum and
{N}euromorphic {C}omputing at {L}ow {T}emperatures},
journal = {Nano letters},
volume = {25},
number = {16},
issn = {1530-6984},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2025-02521},
pages = {6374 - 6381},
year = {2025},
abstract = {Efficient computing in cryogenic environments, including
classical von Neumann, quantum, and neuromorphic systems, is
poised to transform big data processing. The quest for
high-density, energy-efficient memories continues, with
cryogenic memory solutions still unclear. We present a
Cryogenic Capacitorless Random Access Memory (C2RAM) cell
using advanced Si technology, which enhances storage density
through its scalability and multistate capability.
Remarkably, the C2RAM maintains data for over a decade with
its extended retention times and offers potential as an
artificial synapse. This positions C2RAM as an ideal
nonvolatile memory candidate for cryogenic computing
applications and emerging quantum technologies.},
cin = {PGI-9 / JARA-FIT},
ddc = {660},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {5234 - Emerging NC Architectures (POF4-523)},
pid = {G:(DE-HGF)POF4-5234},
typ = {PUB:(DE-HGF)16},
pubmed = {40223210},
UT = {WOS:001466589400001},
doi = {10.1021/acs.nanolett.4c05855},
url = {https://juser.fz-juelich.de/record/1042314},
}