Journal Article

FZJ-2025-02521

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures

Han, Y.FZJ* ; Sun, J.FZJ* ; Richstein, B.RWTH* ; Grenmyr, A.FZJ* ; Bae, J.-H.FZJ* ; Allibert, F. ; Radu, I. ; Grützmacher, D.FZJ* ; Knoch, J.RWTH* ; Zhao, Q.-T. (Corresponding author)FZJ*

2025
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.nanolett.4c05855  doi:10.34734/FZJ-2025-02521

Abstract: Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C2RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C2RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C2RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2025

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 10 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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