%0 Journal Article
%A Fischer, Benedikt
%A Sai, Hitoshi
%A Xu, Zhihao
%A Nuys, Maurice
%A Lambertz, Andreas
%A Lauterbach, Volker
%A Ding, Kaining
%A Rau, Uwe
%A Matsui, Takuya
%T Light soaking of silicon heterojunction solar cells by applying high-intensity line-shaped laser scans
%J Cell reports / Physical science
%V 6
%N 5
%@ 2666-3864
%C Maryland Heights, MO
%I Cell Press
%M FZJ-2025-02635
%P 102558 -
%D 2025
%X Intensive light soaking (LS) is an effective post-treatment to boost the efficiency of hydrogenated amorphous Si (a-Si:H)/crystalline Si (c-Si) heterojunction solar cells. To date, devices have been annealed and illuminated with an intensity of up to 100 suns. Here, the potential of using an ultra-high-density light source equivalent to >10,000 suns is investigated by a scanning continuous-line-shaped infrared laser. It is clarified that the LS effect involves a reordering of H in the a-Si:H layers, which serves as the critical time-limiting process, triggered by carrier injection in c-Si and the associated induced heating. As a result, the local LS treatment increases carrier lifetime and efficiency by up to 400% and 1.3 %abs, respectively. While a laboratory-scale laser was used here, LS treatment via laser (scanning) offers substantial potential for scalability by employing an industrial laser with a larger irradiation area and higher power.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001497599200014
%R 10.1016/j.xcrp.2025.102558
%U https://juser.fz-juelich.de/record/1042666