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| Home > Publications database > Light soaking of silicon heterojunction solar cells by applying high-intensity line-shaped laser scans |
| Journal Article | FZJ-2025-02635 |
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2025
Cell Press
Maryland Heights, MO
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Please use a persistent id in citations: doi:10.1016/j.xcrp.2025.102558 doi:10.34734/FZJ-2025-02635
Abstract: Intensive light soaking (LS) is an effective post-treatment to boost the efficiency of hydrogenated amorphous Si (a-Si:H)/crystalline Si (c-Si) heterojunction solar cells. To date, devices have been annealed and illuminated with an intensity of up to 100 suns. Here, the potential of using an ultra-high-density light source equivalent to >10,000 suns is investigated by a scanning continuous-line-shaped infrared laser. It is clarified that the LS effect involves a reordering of H in the a-Si:H layers, which serves as the critical time-limiting process, triggered by carrier injection in c-Si and the associated induced heating. As a result, the local LS treatment increases carrier lifetime and efficiency by up to 400% and 1.3 %abs, respectively. While a laboratory-scale laser was used here, LS treatment via laser (scanning) offers substantial potential for scalability by employing an industrial laser with a larger irradiation area and higher power.
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