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001042666 1001_ $$0P:(DE-Juel1)167513$$aFischer, Benedikt$$b0$$eCorresponding author
001042666 245__ $$aLight soaking of silicon heterojunction solar cells by applying high-intensity line-shaped laser scans
001042666 260__ $$aMaryland Heights, MO$$bCell Press$$c2025
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001042666 520__ $$aIntensive light soaking (LS) is an effective post-treatment to boost the efficiency of hydrogenated amorphous Si (a-Si:H)/crystalline Si (c-Si) heterojunction solar cells. To date, devices have been annealed and illuminated with an intensity of up to 100 suns. Here, the potential of using an ultra-high-density light source equivalent to >10,000 suns is investigated by a scanning continuous-line-shaped infrared laser. It is clarified that the LS effect involves a reordering of H in the a-Si:H layers, which serves as the critical time-limiting process, triggered by carrier injection in c-Si and the associated induced heating. As a result, the local LS treatment increases carrier lifetime and efficiency by up to 400% and 1.3 %abs, respectively. While a laboratory-scale laser was used here, LS treatment via laser (scanning) offers substantial potential for scalability by employing an industrial laser with a larger irradiation area and higher power.
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001042666 7001_ $$0P:(DE-HGF)0$$aSai, Hitoshi$$b1
001042666 7001_ $$0P:(DE-HGF)0$$aXu, Zhihao$$b2
001042666 7001_ $$0P:(DE-Juel1)130277$$aNuys, Maurice$$b3
001042666 7001_ $$0P:(DE-Juel1)130263$$aLambertz, Andreas$$b4
001042666 7001_ $$0P:(DE-Juel1)170055$$aLauterbach, Volker$$b5
001042666 7001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b6
001042666 7001_ $$0P:(DE-Juel1)143905$$aRau, Uwe$$b7$$ufzj
001042666 7001_ $$0P:(DE-HGF)0$$aMatsui, Takuya$$b8$$eCorresponding author
001042666 773__ $$0PERI:(DE-600)3015727-4$$a10.1016/j.xcrp.2025.102558$$gVol. 6, no. 5, p. 102558 -$$n5$$p102558 -$$tCell reports / Physical science$$v6$$x2666-3864$$y2025
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