TY  - JOUR
AU  - Fischer, Benedikt
AU  - Sai, Hitoshi
AU  - Xu, Zhihao
AU  - Nuys, Maurice
AU  - Lambertz, Andreas
AU  - Lauterbach, Volker
AU  - Ding, Kaining
AU  - Rau, Uwe
AU  - Matsui, Takuya
TI  - Light soaking of silicon heterojunction solar cells by applying high-intensity line-shaped laser scans
JO  - Cell reports / Physical science
VL  - 6
IS  - 5
SN  - 2666-3864
CY  - Maryland Heights, MO
PB  - Cell Press
M1  - FZJ-2025-02635
SP  - 102558 -
PY  - 2025
AB  - Intensive light soaking (LS) is an effective post-treatment to boost the efficiency of hydrogenated amorphous Si (a-Si:H)/crystalline Si (c-Si) heterojunction solar cells. To date, devices have been annealed and illuminated with an intensity of up to 100 suns. Here, the potential of using an ultra-high-density light source equivalent to >10,000 suns is investigated by a scanning continuous-line-shaped infrared laser. It is clarified that the LS effect involves a reordering of H in the a-Si:H layers, which serves as the critical time-limiting process, triggered by carrier injection in c-Si and the associated induced heating. As a result, the local LS treatment increases carrier lifetime and efficiency by up to 400% and 1.3 %abs, respectively. While a laboratory-scale laser was used here, LS treatment via laser (scanning) offers substantial potential for scalability by employing an industrial laser with a larger irradiation area and higher power.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001497599200014
DO  - DOI:10.1016/j.xcrp.2025.102558
UR  - https://juser.fz-juelich.de/record/1042666
ER  -