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@ARTICLE{Fischer:1042666,
author = {Fischer, Benedikt and Sai, Hitoshi and Xu, Zhihao and Nuys,
Maurice and Lambertz, Andreas and Lauterbach, Volker and
Ding, Kaining and Rau, Uwe and Matsui, Takuya},
title = {{L}ight soaking of silicon heterojunction solar cells by
applying high-intensity line-shaped laser scans},
journal = {Cell reports / Physical science},
volume = {6},
number = {5},
issn = {2666-3864},
address = {Maryland Heights, MO},
publisher = {Cell Press},
reportid = {FZJ-2025-02635},
pages = {102558 -},
year = {2025},
abstract = {Intensive light soaking (LS) is an effective post-treatment
to boost the efficiency of hydrogenated amorphous Si
(a-Si:H)/crystalline Si (c-Si) heterojunction solar cells.
To date, devices have been annealed and illuminated with an
intensity of up to 100 suns. Here, the potential of using an
ultra-high-density light source equivalent to >10,000 suns
is investigated by a scanning continuous-line-shaped
infrared laser. It is clarified that the LS effect involves
a reordering of H in the a-Si:H layers, which serves as the
critical time-limiting process, triggered by carrier
injection in c-Si and the associated induced heating. As a
result, the local LS treatment increases carrier lifetime
and efficiency by up to $400\%$ and 1.3 $\%abs,$
respectively. While a laboratory-scale laser was used here,
LS treatment via laser (scanning) offers substantial
potential for scalability by employing an industrial laser
with a larger irradiation area and higher power.},
cin = {IMD-3},
ddc = {530},
cid = {I:(DE-Juel1)IMD-3-20101013},
pnm = {1212 - Materials and Interfaces (POF4-121)},
pid = {G:(DE-HGF)POF4-1212},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001497599200014},
doi = {10.1016/j.xcrp.2025.102558},
url = {https://juser.fz-juelich.de/record/1042666},
}