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@ARTICLE{Fischer:1042666,
      author       = {Fischer, Benedikt and Sai, Hitoshi and Xu, Zhihao and Nuys,
                      Maurice and Lambertz, Andreas and Lauterbach, Volker and
                      Ding, Kaining and Rau, Uwe and Matsui, Takuya},
      title        = {{L}ight soaking of silicon heterojunction solar cells by
                      applying high-intensity line-shaped laser scans},
      journal      = {Cell reports / Physical science},
      volume       = {6},
      number       = {5},
      issn         = {2666-3864},
      address      = {Maryland Heights, MO},
      publisher    = {Cell Press},
      reportid     = {FZJ-2025-02635},
      pages        = {102558 -},
      year         = {2025},
      abstract     = {Intensive light soaking (LS) is an effective post-treatment
                      to boost the efficiency of hydrogenated amorphous Si
                      (a-Si:H)/crystalline Si (c-Si) heterojunction solar cells.
                      To date, devices have been annealed and illuminated with an
                      intensity of up to 100 suns. Here, the potential of using an
                      ultra-high-density light source equivalent to >10,000 suns
                      is investigated by a scanning continuous-line-shaped
                      infrared laser. It is clarified that the LS effect involves
                      a reordering of H in the a-Si:H layers, which serves as the
                      critical time-limiting process, triggered by carrier
                      injection in c-Si and the associated induced heating. As a
                      result, the local LS treatment increases carrier lifetime
                      and efficiency by up to $400\%$ and 1.3 $\%abs,$
                      respectively. While a laboratory-scale laser was used here,
                      LS treatment via laser (scanning) offers substantial
                      potential for scalability by employing an industrial laser
                      with a larger irradiation area and higher power.},
      cin          = {IMD-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IMD-3-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001497599200014},
      doi          = {10.1016/j.xcrp.2025.102558},
      url          = {https://juser.fz-juelich.de/record/1042666},
}