TY  - JOUR
AU  - Rothstein, Alexander
AU  - Fischer, Ammon
AU  - Achtermann, Anthony
AU  - Icking, Eike
AU  - Hecker, Katrin
AU  - Banszerus, Luca
AU  - Otto, Martin
AU  - Trellenkamp, Stefan
AU  - Lentz, Florian
AU  - Watanabe, Kenji
AU  - Taniguchi, Takashi
AU  - Beschoten, Bernd
AU  - Dolleman, Robin J.
AU  - Kennes, Dante M.
AU  - Stampfer, Christoph
TI  - Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene
JO  - Nano letters
VL  - 25
IS  - 16
SN  - 1530-6984
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2025-02651
SP  - 6429 - 6437
PY  - 2025
N1  - Bitte Post-print ergänzen
AB  - Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinements, essential for the operation of single-electron transistors (SETs), and allows one to explore the interplay of confinement, electron interactions, band renormalization, and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable Coulomb blockade resonances. These SETs allow us to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalization crucial for future advanced gate-tunable quantum devices and circuits in tBLG including, e.g., quantum dots and Josephson junction arrays.
LB  - PUB:(DE-HGF)16
DO  - DOI:10.1021/acs.nanolett.4c06492
UR  - https://juser.fz-juelich.de/record/1042705
ER  -