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@ARTICLE{Hpkes:1046494,
      author       = {Hüpkes, Jürgen and Rau, Uwe and Kirchartz, Thomas},
      title        = {{I}mpact of {T}rap {D}epth on the {S}teady‐{S}tate and
                      {T}ransient {P}hotoluminescence in {H}alide {P}erovskite
                      {F}ilms},
      journal      = {Advanced energy materials},
      volume       = {0},
      issn         = {1614-6832},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2025-03833},
      pages        = {e03157},
      year         = {2025},
      note         = {Onlinefirst},
      abstract     = {Within the field of halide perovskites, trap-assisted
                      recombination is often considered to be synonymous with
                      first-order recombination, that is, recombinationthat scales
                      linearly with the charge-carrier concentration. However, the
                      standard Shockley-Read-Hall statistics naturally predict
                      that trap-assisted recombination can have any scaling
                      between linear and quadratic with carrier density, depending
                      on the position of the trap or defect that enables
                      recombination. In an intrinsic semiconductor, the shallower
                      a trap is, the more the recombination rate will scale
                      quadratically with carrier density, and the more it will
                      resemble radiative recombination in its behavior in any
                      transient experiment. Here, the theoretical implications of
                      the trap depth in general and shallow traps in particular on
                      transient and steady-state experiments applied to halide
                      perovskite samples for photovoltaic or optoelectronic
                      applications are discussed.},
      cin          = {IEK-5 / IMD-3},
      ddc          = {050},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)IMD-3-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121) / 1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215 / G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1002/aenm.202503157},
      url          = {https://juser.fz-juelich.de/record/1046494},
}