Hauptseite > Publikationsdatenbank > In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning > print

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100 1 _ |a Demarina, Nataliya
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245 _ _ |a In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning
260 _ _ |a Amsterdam
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700 1 _ |a Karimzadah, Soraya
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700 1 _ |a Bennemann, Benjamin
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700 1 _ |a Krause, Christoph
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700 1 _ |a Jalil, Abdur Rehman
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700 1 _ |a Hartmann, Heinrich
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700 1 _ |a Kardynał, Beata
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700 1 _ |a Lepsa, Mihail Ion
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700 1 _ |a Gruetzmacher, Detlev
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773 _ _ |a 10.1016/j.apsusc.2025.165114
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856 4 _ |u https://juser.fz-juelich.de/record/1049653/files/1-s2.0-S0169433225028302-main.pdf
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