Journal Article

FZJ-2025-05438

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning

Demarina, N. (Corresponding author)FZJ* ; Karimzadah, S. ; Bennemann, B.FZJ* ; Krause, C.FZJ* ; Jalil, A. R.FZJ* ; Hartmann, H.FZJ* ; Kardynał, B.FZJ* ; Lepsa, M. I.FZJ* ; Gruetzmacher, D.FZJ*

2026
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/j.apsusc.2025.165114  doi:10.34734/FZJ-2025-05438

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Contributing Institute(s):

1. Theoretische Nanoelektronik (PGI-2)
2. JARA Institut Green IT (PGI-10)
3. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) (POF4-522)

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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