| Hauptseite > Online First > 2T1R Regulated Memristor Conductance Control Array Architecture for Neuromorphic Computing using 28nm CMOS Technology > print |
| 001 | 1050050 | ||
| 005 | 20251219160307.0 | ||
| 024 | 7 | _ | |a arXiv:2505.12830 |2 arXiv |
| 037 | _ | _ | |a FZJ-2025-05764 |
| 088 | _ | _ | |a arXiv:2505.12830 |2 arXiv |
| 100 | 1 | _ | |a Kuriakose, Neethu |0 P:(DE-Juel1)188691 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a 2T1R Regulated Memristor Conductance Control Array Architecture for Neuromorphic Computing using 28nm CMOS Technology |
| 260 | _ | _ | |c 2025 |
| 336 | 7 | _ | |a Preprint |b preprint |m preprint |0 PUB:(DE-HGF)25 |s 1766156478_16309 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a WORKING_PAPER |2 ORCID |
| 336 | 7 | _ | |a Electronic Article |0 28 |2 EndNote |
| 336 | 7 | _ | |a preprint |2 DRIVER |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a Output Types/Working Paper |2 DataCite |
| 520 | _ | _ | |a Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication (VMM) and acts as kernels in neuromorphic computing. The analog conductance control in a memristor is achieved by applying voltage or current through it. A basic 1T1R array is suitable to avoid sneak path issues but suffer from wire resistances, which affects the read and write procedures. A conductance control scheme with a regulated voltage source will improve the architecture and reduce the possible potential divider effects. A change in conductance is also possible with the provision of a regulated current source and measuring the voltage across the memristors. A regulated 2T1R memristor conductance control architecture is proposed in this work, which avoids the potential divider effect and virtual ground scenario in a regular crossbar scheme, as well as conductance control by passing a regulated current through memristors. The sneak path current is not allowed to pass by the provision of ground potential to both terminals of memristors. |
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| 588 | _ | _ | |a Dataset connected to arXivarXiv |
| 700 | 1 | _ | |a Ashok, Arun |0 P:(DE-Juel1)176328 |b 1 |u fzj |
| 700 | 1 | _ | |a Grewing, Christian |0 P:(DE-Juel1)159350 |b 2 |u fzj |
| 700 | 1 | _ | |a Zambanini, André |0 P:(DE-Juel1)145837 |b 3 |u fzj |
| 700 | 1 | _ | |a van Waasen, Stefan |0 P:(DE-Juel1)142562 |b 4 |u fzj |
| 856 | 4 | _ | |u https://arxiv.org/abs/2505.12830 |
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| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-523 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Neuromorphic Computing and Network Dynamics |9 G:(DE-HGF)POF4-5234 |x 0 |
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