Journal Article

FZJ-2026-00349

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Mistroni, A. ; Lisker, M. ; Yamamoto, Y. ; Wen, W.-C. ; Fidorra, F. ; Tetzner, H. ; Diebel, L. K. ; Visser, L.FZJ* ; Anupam, S.FZJ* ; Mourik, V.FZJ* ; Schreiber, L.FZJ* ; Bluhm, H.FZJ* ; Bougeard, D. ; Zoellner, M. H. ; Capellini, G. ; Reichmann, F.

2025
American Inst. of Physics Melville, NY

This record in other databases:    

Please use a persistent id in citations: doi:10.1063/5.0285958

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Contributing Institute(s):

1. JARA Institut Quanteninformation (PGI-11)

Research Program(s):

1. 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) (POF4-522)

Appears in the scientific report 2025

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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