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@ARTICLE{Gunkel:10518,
      author       = {Gunkel, F. and Hoffmann-Eifert, S. and Dittmann, R. and Mi,
                      S.B. and Jia, C.-L. and Meuffels, P. and Waser, R.},
      title        = {{H}igh temperature conductance characteristics of
                      {L}a{A}l{O}3/{S}r{T}i{O}3-heterostructures under equilibrium
                      oxygen atmospheres},
      journal      = {Applied physics letters},
      volume       = {97},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-10518},
      pages        = {012103},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The interface conductance of LaAlO3/SrTiO3 heterostructures
                      was investigated under high temperature oxygen equilibrium.
                      The dependence of the heterostructure's conductance on
                      oxygen partial pressure (from 10(-22) to 1 bar) and
                      temperature (800 to 1100 K) was compared to the
                      characteristic of SrTiO3 single crystals, which is described
                      in terms of a defect chemistry model. Up to 950 K the
                      equilibrated heterostructures reveal an additional influence
                      of a metallic-like conduction path with a very slight
                      dependence on the oxygen partial pressure. Donor-type
                      interface states which may result from either lattice
                      distortions or A-site cation intermixing during processing
                      are discussed as a possible origin for the exceptional
                      interface conduction of LaAlO3/SrTiO3 heterostructures. (C)
                      2010 American Institute of Physics. [doi:
                      10.1063/1.3457386]},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT / IFF-8},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)VDB788},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279707800024},
      doi          = {10.1063/1.3457386},
      url          = {https://juser.fz-juelich.de/record/10518},
}