Home > Publications database > High temperature conductance characteristics of LaAlO3/SrTiO3-heterostructures under equilibrium oxygen atmospheres |
Journal Article | PreJuSER-10518 |
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2010
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/18111 doi:10.1063/1.3457386
Abstract: The interface conductance of LaAlO3/SrTiO3 heterostructures was investigated under high temperature oxygen equilibrium. The dependence of the heterostructure's conductance on oxygen partial pressure (from 10(-22) to 1 bar) and temperature (800 to 1100 K) was compared to the characteristic of SrTiO3 single crystals, which is described in terms of a defect chemistry model. Up to 950 K the equilibrated heterostructures reveal an additional influence of a metallic-like conduction path with a very slight dependence on the oxygen partial pressure. Donor-type interface states which may result from either lattice distortions or A-site cation intermixing during processing are discussed as a possible origin for the exceptional interface conduction of LaAlO3/SrTiO3 heterostructures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457386]
Keyword(s): J ; lanthanum compounds (auto) ; semiconductor heterojunctions (auto) ; strontium compounds (auto)
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