Conference Presentation (Other)

FZJ-2026-01468

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Magneto-transport Characterization of GeSn for Spintronics Applications

Kaul, P. (Corresponding author)FZJ* ; Concepcion, O.FZJ* ; Wielens, D. ; Zellekens, P.FZJ* ; Li, C. ; Ikonic, Z. ; Ishibashi, K. ; Zhao, Q.-T.FZJ* ; Grützmacher, D.FZJ* ; Brinkman, A. ; Buca, D. M.FZJ*

2024

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Please use a persistent id in citations: doi:10.7567/SSDM.2024.J-3-03

Abstract: The novel GeSn alloy system is an exciting semicon-ductor that is currently under investigation for its appli-cations in photonics, electronics, and spintronics. How-ever, literature on GeSn with the application of magnetic fields is quite limited. This work addresses the low-tem-perature magneto-transport measurements on n-GeSn. The results obtained confirm phase-coherent transport of electrons and the analysis of Shubnikov–de Haas (SdH) oscillations allows the calculation of their effective mass and mobility. First steps to prove 2D conduction channels are also discussed towards the implementation of GeSn qubits for quantum computing.

Keyword(s): Engineering, Industrial Materials and Processing (1st) ; Materials Science (2nd)

Note: Restricted till Sept 2026

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) (101070208)

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