Home > Publications database > Siliziumkarbid-Dünnschichten, hergestellt durch CVD mittels flüssigen Präkursor enthaltend Silizium und Kohlenstoff
 
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Siliziumkarbid-Dünnschichten, hergestellt durch CVD mittels flüssigen Präkursor enthaltend Silizium und Kohlenstoff

 ;

2026

Patent No.: DE 102024127353 A1; 102024127353.4

Contributing Institute(s):
  1. Photovoltaik (IMD-3)
Research Program(s):
  1. 1212 - Materials and Interfaces (POF4-121) (POF4-121)

Appears in the scientific report 2026
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The record appears in these collections:
Institute Collections > IMD > IMD-3
Document types > Patents > Patents
Workflow collections > Public records
Publications database
 Record created 2026-06-15, last modified 2026-06-17
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